Reduction of Leakage Power of Full Adder using Variable Body Biasing with sleep insertion

Reduction of leakage Power is the major problem in digital circuits. There are various techniques that are used to reduce the leakage power. Variable Body Biasing technique is discussed in this paper. Variable body biasing technique with sleep insertion technique is one of the efficient technique for designing combinational digital circuits which significantly cuts down the leakage current without increasing the dynamic power dissipation, sleep insertion technique is also added along with variable body biasing technique so that there is no loss of state as in sleep stack technique. This thesis proposed a technique that reduces both power dissipation and glitches. This technique is based on two methods first is variable body biasing and the other is sleep insertion technique. Pass transistor is also added in the circuitry in order to eliminate glitches if any. The existing leakage reduction techniques like sleepy keeper and stack technique are having drawbacks like increased area and delay. Other delay elements that are used for reduction in glitches takes larger area when compared with pass transistor. This new proposed approach eliminates leakage power along with glitches keeping in mind all the drawbacks of all the earlier techniques. All the performance has been investigated using 90nm Technology at 1 voltage and evaluated by the comparison of the simulation result obtain from TSPICE.